An ultra-high level second-order nonlinear optical susceptibility in strained asymmetric GaN-AlGaN-AlN quantum wells : Towards all-optical devices and systemsROSTAMI, A; BAGHBAN, H; RASOOLI SAGHAI, H et al.Microelectronics journal. 2007, Vol 38, Num 8-9, pp 900-904, issn 0959-8324, 5 p.Article

A proposal for enhancement of optical nonlinearity in GaN/AlGaN centered defect quantum box (CDQB) nanocrystalROSTAMI, A; RASOOLI SAGHAI, H; BAGHBAN ASGHARI NEJAD, H et al.Solid-state electronics. 2008, Vol 52, Num 7, pp 1075-1081, issn 0038-1101, 7 p.Article

Defect-induced enhancement of absorption coefficient and electroabsorption properties in GaN/AlGaN centered defect quantum box (CDQB) nanocrystalROSTAMI, A; RASOOLI SAGHAI, H; BAGHBAN ASGHARI NEJAD, H et al.Physica. B, Condensed matter. 2008, Vol 403, Num 17, pp 2789-2796, issn 0921-4526, 8 p.Article

Highly enhanced second-order nonlinear susceptibilities in tailored GaN-AlGaN-A1N quantum well structuresROSTAMI, A; BAGHBAN ASGHARI NEJAD, H; RASOOLI SAGHAI, H et al.Physica. B, Condensed matter. 2008, Vol 403, Num 17, pp 2725-2731, issn 0921-4526, 7 p.Article

Electron transport in array of centered defect quantum dotsSADOOGI, N; RASOOLI SAGHAI, H; ROSTAMI, A et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 41, Num 2, pp 269-277, issn 1386-9477, 9 p.Article

A study in optical properties of AlGaN/GaN pyramid and prism-shape quantum dotsRASOOLI SAGHAI, H; ASGARI, A; BAGHBAN ASGHARI NEJAD, H et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 41, Num 2, pp 245-253, issn 1386-9477, 9 p.Article

Tailoring of Quantum Dot basic cell towards high detectivity THz-IR photodetectorROSTAMI, A; RASOOLI SAGHAI, H; BAGHBAN ASGHARI NEJAD, H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7135, issn 0277-786X, isbn 978-0-8194-7375-2 0-8194-7375-8, 71352Z.1-71352Z.9, 2Conference Paper